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| CM1000HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM H-Series Module 1000 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N E D Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 1000 VCES Volts (x 50) 24 E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4 1.730.04/0.02 44.01.0/0.5 1.460.04/0.02 37.01.0/0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5 201 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1000HA-24H Single IGBTMODTM H-Series Module 1000 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - - VRMS CM1000HA-24H -40 to +150 -40 to +125 1200 20 1000 2000* 1000 2000* 5800 95 26 1600 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 100mA, VCE = 10V IC = 1000A, VGE = 15V IC = 1000A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 1000A, VGS = 15V IE = 1000A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.7 2.4 5000 - Max. 6 0.5 7.5 3.6** - - 3.5 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 1000A, diE/dt = -2000A/s IE = 1000A, diE/dt = -2000A/s VCC = 600V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 7.4 Max. 200 70 40 600 1500 1200 350 250 - Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.022 0.050 0.018 Units C/W C/W C/W 202 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1000HA-24H Single IGBTMODTM H-Series Module 1000 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2000 VGE = 20V 15 12 2000 VCE = 10V Tj = 25C Tj = 125C VCE(sat), (VOLTS) 5 VGE = 15V Tj = 25C Tj = 125C 1600 IC, (AMPERES) Tj = 25C 1600 11 IC, (AMPERES) 4 1200 10 1200 3 800 800 2 400 9 8 7 0 2 4 6 8 10 VCE, (VOLTS) 400 1 0 0 0 4 8 12 16 20 VGE, (VOLTS) 0 0 400 800 1200 1600 2000 IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25C Tj = 25C IC = 2000A Cies, Coes, Cres, (nF) 103 8 103 6 IC = 1000A IE, (AMPERES) 102 Cies Coes 4 102 101 Cres 2 IC = 400A VGE = 0V 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 100 10-1 100 VCE, (VOLTS) 101 102 VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE (TYPICAL) 104 103 103 20 16 SWITCHING TIME, (ns) 103 td(off) VGE, (VOLTS) t rr, (ns) VCC = 400V VCC = 600V td(on) tf 102 Irr 102 Irr, (AMPERES) t rr 12 8 102 tr VCC = 600V VGE = 15V RG = 3.3 Tj = 125C di/dt = -2000A/sec Tj = 25C 4 101 104 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 0 0 2000 4000 QG, (nC) 102 103 6000 8000 IE, (AMPERES) 203 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1000HA-24H Single IGBTMODTM H-Series Module 1000 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.022C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.05C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 204 |
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